ultra low dropout IRUH33P253A1M positive fixed linear regulator +3.3vin to +2.5vout at 3.0a www.irf.com 1 features: total dose to 1.0 mrad (si) and low dose capability to 500 krad (si) allows use in space applications single event latchup immune let= 84 mev/(mg/cm 2 ) fluency = 1x10 9 ions/cm 2 low noise, higher efficiency ultra low dropout voltage of 0.4v@ 3a outsignificantly reduces power consumption remote shutdown permits powersequencing to be easily implemented hermetic 8-lead flat pack ensures higher reliability space level screened this part is also available in mo-078 package as iruh33p253b1m the IRUH33P253A1M is a space qualified, ultra lowdropout linear regulator designed specifically for space applications. this product has been characterized to a totalionizing dose of 1.0 mrad (si) per mil-std-883, method 1019, condition d at both high and low dose rates under biased and unbiased conditions to account for eldrs effects in bipolar devices. the ultra low dropout voltage of 0.4v @ 3a makes the part particularly useful for applications requiring low noise and higher efficiency. 11/14/05 absolute maximum ratings parameter symbol value units output current i o 3.5 a input voltage v in 7 v power dissipation t c = 25c p tot 19 w thermal resistance, junction to case r thjc 6.5 c/w operating temperature range t j -55 to +125 storage temperature range t s -65 to +150 c lead temperature t l 300 8-lead flat pack product summary part number dropout i o v in v out IRUH33P253A1M 0.4v 3.0a 3.3v 2.5v pd-97042 downloaded from: http:///
2 www.irf.com IRUH33P253A1M refer page 3 for notes for electrical characteristic tables electrical characteristics @t a = 25c (unless otherwise specified) pre-radiation parameter test conditions symbol min. typ. max. units v in = 3.3v, i o = 1.5a 2.475 2.5 2.525 v in = 2.97v, i o = 50ma 2.375 - 2.625 v in = 2.97v, i o = 3.0a 2.375 - 2.625 v in = 3.63v, i o = 50ma 2.375 - 2.625 v in = 3.63v, i o = 3.0a 2.375 - 2.625 input voltage range - operating i o = 3.0a v in 2.9 - 6.5 dropout voltage i o = 3.0a, v out = 2.5v v drop -- - 0.4 current limit v in = 3.3v, overcurrent latch up i latch 3.0 - -a ripple rejection f = 120hz, i out = 50ma 65 - - db shutdown source current v shdn = 5.0v i shdn - 200 - a shutdown pin threshold v in = 3.3v v shdn 1.0 - 1.6 output voltage at shutdown v in = 3.3v, i o = 50ma, vshdn = +5.0v v out (shdn) -0.1 - +0.1 v v v out output voltage electrical characteristics @t a = -55c to 125c (unless otherwise specified) pre-radiation parameter test conditions symbol min. typ. max. units v in = 3.3v, i o = 1.5a 2.375 2.5 2.625 v in = 2.97v, i o = 50ma 2.375 - 2.625 v in = 2.97v, i o = 3.0a 2.375 - 2.625 v in = 3.63v, i o = 50ma 2.375 - 2.625 v in = 3.63v, i o = 3.0a 2.375 - 2.625 input voltage range - operating i o = 3.0a v in 2.9 - 6.5 dropout voltage i o = 3.0a, v out = 2.5v v drop - - 0.4 current limit v in = 3.3v, overcurrent latch up i latch 3.0 - -a ripple rejection f = 120hz, i out = 50ma 65 - - db shutdown source current v shdn = 5.0v i shdn - 200 - a shutdown pin threshold v in = 3.3v v shdn 1.0 - 1.6 output voltage at shutdown v in = 3.3v, i o = 50ma, vshdn = +5.0v v out (shdn) -0.1 - +0.1 v v v out output voltage downloaded from: http:///
www.irf.com 3 IRUH33P253A1M notes for electrical characteristic tables v shutdown ramp from 0.8v to 4.8v, output monitored for a 100mv drop below the nominal specification for v out pre-radiation characteristics omr9601 ripple rejection vs. frequency 0 20 40 60 80 100 120 100 1,000 10,000 100,000 1,000,000 frequency (hz) (db) 3a 1.5a .75a .50a fig 1. ripple rejection vs frequency electrical characteristics @t a = 25c (unless otherwise specified) post-radiation parameter test conditions symbol min. typ. max. units v in = 3.3v, i o = 1.5a 2.375 - 2.625 v in = 2.97v, i o = 50ma 2.375 - 2.625 v in = 2.97v, i o = 3.0a 2.375 - 2.625 v in = 3.63v, i o = 50ma 2.375 - 2.625 v in = 3.63v, i o = 3.0a 2.375 - 2.625 current limit v in = 3.3v i max 3.0 - -a ripple rejection f = 120hz, i out = 50ma 40 - - db output voltage at shutdown v in = 3.3v, i o = 50ma, vshdn = +5.0v v out (shdn) -0.1 - +0.1 v v v out output voltage downloaded from: http:///
4 www.irf.com IRUH33P253A1M post-radiation characteristics fig 2. voltage output vs total ionizing dose 2.46 2.48 2.50 2.52 2.54 2.56 2.58 2.60 2.62 2.64 2.66 2.68 2.70 1 10 100 1000 total dose level (krads) vout (v) test data (reg. dr.) no load @ 50 r/s, 25 0 c hybrid regulator bias ed @ 90 r/s 25 0 c hybrid regulator unbiased @90 r/s 25 0 c fig 3. voltage output vs total ionizing dose total ionizing dose (tid) downloaded from: http:///
www.irf.com 5 IRUH33P253A1M post-radiation characteristics fig 4. voltage output vs total ionizing dose fig 5. voltage output vs time single event latch-up enhanced low dose rate sensitivity (dose rate = 0.1 rad/s) downloaded from: http:///
6 www.irf.com IRUH33P253A1M recommended input capacitance for a generic application is a 100 f, 16v tantalum capacitor. however, the input capacitance is not critical to the stability of the regulator and is therefore application dependent. indesigns with a clean bus voltage that is situated close to the input of the regulator, only a small ceramic capacitor will be needed to decouple high frequency noise. on the other hand, in designs with a noisy bus, a larger capacitor will be needed. care should be taken to ensure that the input to the regulator is sufficiently free of noise and disturbances. input capacitance fig 6. typical application circuit output capacitancelike most ultra low dropout voltage regulators, IRUH33P253A1M requires the use of an output capacitor as part of the device frequency compensation. the device requires a minimum of 220 f tantalum to ensure stability.many different types of capacitor are available and have widely varying characteristics. these capacitors differ in capacitor tolerance, equivalent series resistance (esr), equivalent series inductance and capacitance temperature coefficient. the IRUH33P253A1M frequency compensation optimizes frequency response with low esr capacitors. in general, use capacitors with an esr of less than 50 m ? for heavy load applications.high quality bypass capacitors must also be used to limit the high frequency noise generated by the load. multiple small ceramic capacitors are typically required to limit parasitic inductance (esl) and esr in the capacitors to acceptable levels. the upper limit of the capacitance is governed by the delayed over-current latch function of the regulator. the regulator has a protection circuit that will latch the device off in the event of a short circuit. however, since it is known that the regulator will draw a large in-rush current upon startup, the latch-off is delayed by about 10ms to allow the output capacitors to charge to a steady state without shutting down. during this period, the regulator will have an output current at its maximum of around 5a typical. therefore, the maximum output capacitance can be as high as 20,000uf without causing device to latch-off during start-up. figure 6 shows a typical application circuit. the output load capacitor consists of one tantalum capacitor (or more in parallel) of 1,000 f with esr no high than 50 m ? , and 10 x 1.0 f x7r ceramic caps. this will give approximately 59 degrees phase and 24db gain margin. IRUH33P253A1M vout vin shdn gnd 100uf 16v tantalum 1.0ufx10 ceramic x 7r 1000uf 6.3v low esr tantalu m vin vout ground downloaded from: http:///
www.irf.com 7 IRUH33P253A1M space level screening requirements shutdown vin vout groun d drive gnd note: international rectifier does not currently have a dscc certified radiation hardness assurance program fig 7. simplified schematic circuit test/inspection screening level mil-std-883 space method pre seal burn-in optional 1030 nondestructive bond pull 100% 2023 internal visual 100% 2017 temperature cycle 100% 1010 constant acceleration 100% 2001 mechanical shock 100% 2002 pind 100% 2020 pre burn-in-electrical 100% burn-in 100% 1015 final electrical 100% seal 100% 1014 radiographic 100% 2012 external visual 100% 2009 downloaded from: http:///
8 www.irf.com IRUH33P253A1M case outline and dimensions - 8-lead flat pack ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 11/2005 notes:1) all dimensions are in inches part numbering nomenclature pin assignment pin # pin description 1g n d 2g n d 3 shutdown 4n / c 5 v out 6 v out 7 v in 8 v in ir u h 33 p 25 3 a 1m p linear regulator module u = ultra low dropout regulator r adiation hardening h = rad hardened or tolerant i nput voltage 33 = 3.3v screening p = unscreened, 25c electrical test ( not for qua l) k = space level screening package code a = 8 lead flat pack p olarity p = positive o utput voltage 2 5 = 2.5v maximum output current 3 = 3 amp rad level 1m = 1m rads downloaded from: http:///
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